China Darlington Transistor Chips manufacturer & supplier

Molybdenum

PB07

Features:
1) Spec: from φ3mm to 150mm with difference thickness
2) Hardness: >240hv
3) Clean, degreased and packaged in an inert atmosph

2007-01-10

ballast

PZ004

Electronic ballsts for 100W/120V metal Halide lamps(HID)
1) Long life ,Over 5years under correct situation
2) The out case made by aluminum

2007-01-10

Transistor

PJX017

Specifications:
1) Size: 0.81 x 0.81mm
2) P: 300mW
3) IO: 1A
4) VR: ?Y40V...

2007-01-10

inductance ballast

PZ005

Key parameters:
1) Input voltage: 277V
2) Input current: 1.24A
3) Input power: 330W
4) Power factor: >0.90...

2007-01-10

diode module

PMC002

Features:
1) 55A - 1000A /400-1600V available;Same as PExxxseries;
2) General diode module
3) General mixture diode module
4) Fast diode modu

2007-01-10

semiconductor

PC003

Features:
1) Advanced glass passivation chips
2) Small turn-on voltage
3) Flexible control trigger current
4) Used in various circuits to con

2007-01-10

thyristor

Diode Fusion

Features:
1) A750 diode fusion
2) General-purpose high power standard rectifier
3) All-diffused structure
4) High surge rating...

2007-01-10

semiconductor

PKX026

Features:
1) C712 power thyristor fusion
2) All-diffused structure
3) Interdigitated amplifying gate configuration
4) VTM < 1.9V at 125oC, 10

2007-01-10

ballast

PRC004

Features:
1) All diffused structure
2) High surge rating
3) Blocking capability up to 2000V
4) Soft reverse recovery...

2007-01-10

Rectifier

Thyristor

Features:
1) Max-repetitive peak reverse voltage: 1800 ~ 2200V
2) Max-repetitive peak off-state Voltage(Vdrm): 1800 ~ 2200V
3) IT(AV): 4540A

2007-01-10