Features:
1) C712 power thyristor fusion
2) All-diffused structure
3) Interdigitated amplifying gate configuration
4) VTM < 1.9V at 125oC, 1000A
5) High DV/DT capability; blocking capability up to 2000V
6) Pressure assembled device
7) For inverter and chopper applications

Specifications at 125oC:
1) Tq = 40us
2) DI/DT = 25A/us
3) ITM = 500A
4) VR = 50V
5) DV/DT = 1000V/us
6) VD = 1440V

Min Order Quantity: 10pcs in wafer form